Methods and devices to increase memory device data reliability

ABSTRACT

A first data set is written to first memory units identified as having a higher data reliability and a second data set is written to second memory units identified as having a lower data reliability than the first memory units. In some cases, the second data set may include metadata or redundancy information that is useful to aid in reading and/or decoding the first data set. The act of writing the second data set increases the data reliability of the first data set. The second data set may be a null pattern, such as all erased bits.

SUMMARY

Various embodiments are generally directed to increasing the datareliability of memory devices. Some embodiments involve methods ofoperating a memory device to increase data reliability. A first data setis written to first memory units and a second data set is written tosecond memory units. The second memory units are associated with lowerdata reliability than the first memory units. The act of writing thesecond data set increases the data reliability of the first data set.The second data set includes one or both of information that is useableto increase the reliability of the first data set and a dummy pattern.

The lower data reliability of the second data units may be due tonon-random failures that arise from hardware configuration of the memorydevice or from algorithmic operation of the memory device, or both.

In some cases, the second data set may include metadata that is usefulto aid in reading or decoding the first data set. To take into accountthe lower reliability of the second data units, redundant copies of themetadata may be stored. In some cases, the second data set may containredundancy information configured to protect the data stored in thefirst memory units. For example, the redundancy information may beassociated with multiple types of error correcting coding (ECC). Ifmultiple types of ECC are used, the memory controller may implement avoting scheme to identify the correctly decoded data. For example, thecontroller may decode the first data set using each type of ECC. Thecorrectly decoded data is identified as the decoded data that isproduced as the result of decoding using a majority of the ECCs.

Some embodiments involve a method of operating a solid state memorydevice. First memory pages having a higher data reliability and secondmemory pages having a lower data reliability are identified. A firstdata set is written to the first pages and a second data set is writtento the second pages. The second data set includes at least one ofinformation that increases the data reliability of the first data setand a dummy pattern. In some cases, the second memory units include apredetermined number of memory pages of a memory block that are writtenlast during a write operation of the memory block. For example, thepredetermined number may be four.

In some cases, the dummy pattern may comprise all erased bits.

In some cases writing the second data set may comprises writing a testpattern. The test pattern may be read and the results of reading thetest pattern used to determine parameters to read the first memoryunits.

Some embodiments involve a memory device that includes memory storageand a memory controller. The memory storage includes first memory unitsidentified as having higher data reliability and second memory unitsidentified as having lower data reliability. The memory controller isconfigured to write a first data set to the first memory unitsidentified as having higher data reliability and to write a second dataset to the second memory units identified as having lower datareliability, wherein the second data set increases reliability of thefirst data set. For example, the act of writing the second data set tothe second memory units may increase data reliability of the first dataset without regard to information written to the second data set.

In some cases, the memory controller may be configured to identify thesecond memory units as having lower reliability. For example, the memorycontroller may make this identification based on the bit error rate ofthe second memory units.

In some cases, the second memory units have lower data reliability dueto non-random errors arising from one or both of hardware configurationof the memory device and algorithmic operation of the memory device.

According to some aspects, the memory storage comprises flash memory.The second memory units may include a predetermined number of memorypages of a memory block that are written last during a write operationof the memory block.

These and other features and aspects of the various embodimentsdisclosed herein can be understood in view of the following detaileddiscussion and the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a memory system configured toincrease data reliability in accordance with disclosed embodiments;

FIG. 2A is flow diagram illustrating a process of supplementing thereliability of a long term data set written to first memory units havinga higher reliability using short term data written to second memoryunits that have a lower reliability;

FIG. 2B is a flow diagram illustrating a process of supplementing thereliability of a first data set written to first memory units having ahigher reliability by writing a second data set to second memory unitshaving a lower reliability;

FIG. 3 is a flow diagram illustrating a process of supplementing thereliability of a first data set written to first memory units having ahigher reliability by using the information of a second data set storedin second memory units having a lower reliability;

FIG. 4 is a depiction of a portion of a solid state memory device thatincludes multiple memory units comprising multi-level memory cells;

FIG. 5 shows bit error rate (BER) data for a block of memory pages of asolid state memory device showing the relationship between BER and writetime for a random data pattern;

FIG. 6 shows BER data vs. write time for a block of memory pages whenthe last written pages are ignored;

FIG. 7 shows BER data vs. write time for a block of memory pages whendummy data is written to the last written pages;

FIG. 8 is a flow diagram illustrating a process that involves writingtest information to the low reliability memory units; and

FIG. 9 is a flow diagram illustrating a process that involves writingmultiple sets of redundancy information to the low reliability memoryunits.

DETAILED DESCRIPTION

Memory devices are generally organized into a number of memory unitsthat are used to store data. According to one implementation, eachmemory unit corresponds to a page of solid state memory cells.Alternatively, the memory units may correspond to data tracks onmagnetic media, or memory units of other storage media. Each memory unitof a memory device can be associated with a characteristic datareliability which indicates the ability of the memory unit to store andretain data without errors over a period of time. Different memory unitsof a memory device may be associated with different data reliabilities,e.g., first memory units of a memory device may be associated with ahigher data reliability than second memory units of the same memorydevice. Thus, for a given period of time, the first memory unitsassociated with the higher data reliability can store and retain datawith fewer errors than the second memory units associated with the lowerdata reliability. As discussed below, the differences in datareliability between memory units of a memory device can arise due torandom errors or due to systematic errors caused by the hardwareconfiguration of the memory units. In some implementations, thesystematic errors can arise from the process used to write data toand/or read data from the memory units. Devices and methods disclosedherein involve writing data sets to the memory units of a memory devicebased on the reliability of the memory units.

FIG. 1 is a block diagram of a memory device 110 comprising memorystorage 115 and a memory controller 120. The memory storage includes anumber of memory units, e.g., pages or tracks, including first memoryunits 117 associated with a first data reliability and second memoryunits 118 associated with a second data reliability which is lower thanthe first data reliability.

The memory controller is configured to take into account the differentdata reliabilities associated with different data units when writingdata to the memory units. For example, the memory controller may beconfigured to write data only to the higher reliability memory units(first memory units) and may ignore the memory units (second memoryunits) having a lower reliability. In some implementations, the memorycontroller may be configured to write data requiring relatively highdata reliability to the first memory units and to write data that doesnot require high data reliability to the second memory units. The datawritten to the first memory units may contain more critical information,e.g., program code, in comparison to the data written to the secondmemory units, which may be more tolerant of errors. In some cases, thememory controller may write information to the second memory units thatis useful to interpret, e.g., read and/or decode the data stored in thefirst memory units.

In some cases, the act of writing the second memory units increases thedata reliability of the first memory units. The bits stored in thesecond memory units may or may not be useable to interpret the datastored in the first memory units. For example, the controller may writea dummy pattern (all erased bits, random, or other pattern) to thesecond memory units. The writing of the dummy pattern can improve thedata reliability of the first memory units, as described below.

Although only first and second memory units are shown in FIG. 1, it willbe appreciated that the memory device may be organized into any numberof groups of memory units, each group associated with a differentreliability. The controller may be configured to write data sets to themultiple groups of memory units taking into account the differentreliabilities of the groups of memory units. In some implementations,the controller may be configured to determine which memory units arehigher reliability memory units and which memory units are lowerreliability units. The controller may perform this function, forexample, by tracking the bit error rate (BER) of the memory units.

In some cases, as illustrated by the flow diagram of FIG. 2A, datawritten 210 to the first memory units may need to be retained for alonger period of time than data written 220 to the second memory units.The short term data is used 225 to interpret the long term data.

In some cases, as illustrated by the flow diagram of FIG. 2B, a firstdata set is written 230 to first memory units having a higher datareliability and a second data set is written 240 to second memory unitshaving a lower data reliability. The second data set stored in thesecond memory units may include information useable to interpret thefirst data set and/or may include a dummy pattern.

In some configurations, the act of writing data into the second dataunits improves the reliability of the data written to the first dataunit. In these configurations, the second data set may not includeinformation that is used by the controller. At least some of the bits ofthe second data set may be a dummy pattern, such as all erased bits or arandom pattern.

In some configurations, as illustrated by the flow diagram of FIG. 3,the first data set is written 310 to first memory units and the seconddata set is written 320 to the second memory units. The information inthe second data set is read from the second memory units and is operatedon 330 by the controller to increase the reliability of the data storedin the first data units. For example, the information in the second dataset may include redundancy information for the first data set, and/orvarious type of metadata associated with the first memory units, such asa defect map, a reference voltage map, a bit error rate map, and/or anyother information that supplements the reliability associated withwriting, reading and/or decoding the first data set stored in the firstmemory units. Information stored in the second memory units may be usedduring a write operation that writes the first data set to the firstmemory units, e.g., to avoid memory cells in the first memory units thathave a high BER, and/or may be used during a read operation that readsdata from the first memory units, e.g., a reference voltage map mayprovide the reference voltages used to read certain ones of the firstmemory units and/or may be used when data read from the first memoryunits is decoded, e.g., redundancy information used to correct errors inthe first data set.

In some embodiments, the memory controller may be configured to identifythe pages having higher reliability and the pages having lowerreliability, for example, based on the bit error rate (BER) of thepages. In other embodiments, the lower reliability pages may be known apriori. For example, the lower reliability pages may be identifiablebased on the hardware configuration of the memory units and/or thealgorithmic configuration used to access the memory units.

In some cases, the first and second memory units may be pages of anon-volatile solid state memory device (SSD), such as flash memory. Thehardware architecture of the SSD, design page mapping, and/or algorithmused write data to the pages, may cause some pages of the SSD to be lessreliable (e.g., have a higher BER) than other pages of the SSD. Thepages of SSD such as flash memory are erased and written in blocks,where there are a number of pages per block, e.g., 64 pages per block,128 pages per block, 256 pages per block. Some groups of pages in eachblock may be associated with lower data reliability and other pages ineach block may be associated with a higher data reliability. The lowerreliability pages may comprise one or more of last written pages, higheraddress pages, and/or pages associated with higher significant bits, forexample.

Some SSDs are capable of storing multiple bits per memory cell. Forexample, in SSDs that include memory cells capable of storing two bitsof information, each memory cell stores a most significant bit (MSB) anda least significant bit (LSB). Each physical page of the memory devicemay be arranged in MSB and LSB pages. Due to the hardware and/orsoftware configuration of the SSD, the MSB and LSB pages can havesignificantly different bit error rates.

FIG. 4 illustrates a block 401 of memory cells 402 that are capable ofstoring two bits of information denoted the most significant bit (MSB)and the least significant bit (LSB). Although this example involvesmulti-level memory cells that store two bits per memory cell, ingeneral, multi-level memory cells may store three, four bits, five bitsor even more bits per memory cell.

Each physical page 403 associated with a word line can be subdividedinto multiple logical pages 420, 421, as illustrated in FIG. 4. Onelogical page 420, 421 for each type of bit may be stored in the memorycells 402 of the physical page 403. Memory cell arrays that subdivideone physical page into multiple logical pages corresponding to thenumber of bits stored in multi-level memory cell are referred to hereinas having multi-page architecture. In the exemplary memory storage arrayblock 301 illustrated in FIG. 4 each physical page 403 associated with aword line WL₁-WL_(M-1) is subdivided into two logical pages 420, 421. Afirst logical page 420 includes the LSBs of the memory cells 402 of thephysical page 403. The second logical page 421 includes the MSBs of thememory cells 402 of the physical page 403. The logical pages 420, 421associated with a physical page 403 are capable of being accessed(programmed or read) independently of each other. The LSBs stored in thememory cells of the physical page are accessed using a first logicalpage address and the MSBs stored in the memory cells of the physicalpage are accessed using a second logical page address.

In some cases, the bit error rate of SSD pages of a block (or othergrouping of pages) may increase with time of the write operation and/orpage address. FIG. 5 illustrates a graph of bit error rate vs. pageaddress for a block of an SSD having multi-level memory cells afterstress testing that simulates 15,000 erase/write cycles and a retentiontime of 6 months. A block write cycle of the SSD includes writing theentire block, in this case 256 pages, of which 128 are LSB pages and 128are MSB pages. In this example, in general, the MSB pages have a higherBER than the LSB pages. Furthermore, pages written last during the blockwrite cycle have a higher BER than pages written earlier in the writecycle. Pages having page addresses 250, 251, 254, 255 are the four pageswritten last during a block write. As illustrated by FIG. 5, the lastwritten pages (such as page addresses 250, 251, 254, 255) have almost 3times the BER of previously written pages in the block.

In some implementations discussed herein, a predetermined number of thelast written pages (e.g., page addresses 250, 251, 254, 255) maycorrespond to the lower reliability second memory units and thepreviously written pages (e.g., page addresses 1-249, 252, and 253)correspond to the higher reliability first memory units. The lastwritten pages exhibit higher BER because they do not benefit from theprogram disturb effects and floating gate to floating gate couplingeffects experienced by the previously written pages. These effects arisedue to hardware configuration of the SSD and/or the algorithmicconfiguration of the write cycle.

If the four last written pages, page addresses 250, 251, 254, 255, areignored during block write operations, page addresses 246, 247, 252, 253become the four last written pages and the higher BER shifts to thesepages, as illustrated in FIG. 6. This occurs because if page addresses250, 251, 254, 255 are not written to, page addresses 246, 247, 252, 253do not experience the program disturb effects and floating gate tofloating gate coupling effects that would have occurred if pages 250,251, 254, 255 were written. Thus, in some cases, ignoring the lowreliability pages for the purpose of writing data merely shifts theproblem to the other pages in the block that then become the lastwritten pages. As previously discussed in connection with flow diagrams2A, 2B, and 3, writing a second data set to the lower reliability pagesmay be implemented to supplement the reliability of the higherreliability pages, even if the second data set does not include anymeaningful information. In various implementations, a dummy pattern,e.g., a random pattern, or all 0's or all 1's, may be written into thesecond memory units and the act of writing this data to the secondmemory units supplements the reliability of the first memory units. FIG.7 illustrates the improvement in the BER of the next to last writtenpage addresses 246, 247, 252, 253 when the last written page addresses250, 251, 254, 255 are programmed to the erased state (all 1's).Programming the second memory units to the erased state is faster thanprogramming other non-random patterns or a random pattern. Thus, thedata set written to the second data units may include all erased bits ormay predominantly include erased bits, e.g., over 50% of the bits of thesecond data set may be erased bits.

In some cases, the data set written to the second memory units includesinformation that can be used to supplement the reliability of the datawritten to the first memory units. The useable information may be storedin some of the second memory units and a dummy pattern may be stored insome of the second memory units. For example, the useable informationmay include a known data pattern written to the second memory units. Theknown data pattern can be used to predict the failure characteristicsfor the first memory units. If the failure characteristics of the firstmemory units are predicted, the controller can take some action tocompensate and avoid data errors. For example, the controller may usethe information in the second memory units to determine that thereference voltages used to read the first memory units need to beadjusted and/or may adjust the reference voltages used to read the firstmemory units, thereby avoiding errors.

The flow diagram of FIG. 8 illustrates a process of using theinformation of the second data set stored in the second memory units tosupplement the reliability of the first data set stored in the firstmemory units. According to this process, the first data set is written810 to the first memory units and the second data set includes testinformation comprising a known data pattern which is written 820 to thesecond memory units. Before the first memory units are read, the testinformation is read from the second memory units. The test informationis used 830 in conjunction with a correlation function, which may bedeveloped during the initial characterization of the memory cells, topredict one or more reference voltages that will reduce the error rateof the first memory units. The first memory units are read 840 using thereference voltages predicted by the correlation function and the testinformation.

In some cases, the second memory units can be used to store metadatathat is volatile across long retention times, but may be useful forshort retention times. For example, the metadata can include one or moreof information about defects in the first memory units, defect maps forthe first memory units, reference voltage maps for the first memoryunits, and/or any other information that could be used to supplement theperformance and/or endurance of the first memory units. To compensatefor the higher error rate of the second memory units, multiple redundantcopies of the metadata may be stored.

In some implementations, the second memory units can be used to storeadditional redundancy code that protects the data stored in the firstmemory units. The additional redundancy information could be an errorcorrection code (ECC) that protects a portion or all of first data setstored in the first memory units, e.g., a portion or all of the memoryblock. The correction power of the additional redundancy code may bebased on the amount of redundancy necessary to ensure the redundancyinformation is protected with the higher BER of the second memory units.For minimal retention times, the BER for the lower reliability seconddata units should be sufficiently small so that excess error correctioncoding is not required.

In some cases, multiple sets of additional redundancy information storedin the second memory units may be used to protect data stored in thefirst memory units. When multiple redundancy information is employed, avoting scheme can be implemented to determine the correctly decodeddata. FIG. 9 is a flow diagram that illustrates the use of multiple setsof redundancy information. A first data set is written 910 to the firstmemory units and multiple sets of redundancy information associated withthe first data set are written 920 to the second memory units. Each ofthe multiple sets of redundancy information can employ different typesof error correction coding, e.g., different ECCs having different errorcorrection strengths.

When the first data set is accessed, the first data set and the multiplesets of redundancy information are read 930 from the first memory unitsand the second memory units, respectively. The first data set is decoded940 using each set of redundancy information, producing multiple decodeddata sets. If the decoded data sets do not agree, a voting scheme isimplemented 950 to determine the correctly decoded data. For example,the voting scheme may involve determining if a majority of the sets ofredundancy information produce the same set of decoded data. If so, thethen the set of decoded data produced by the majority is determined tobe the correctly decoded data.

The implementations described herein, such as those illustrated by flowdiagrams of FIGS. 2, 3, 8, and 9, are not mutually exclusive and may beused together. For example, the second memory units may optionally storeone or more of short retention information, map information, a testpattern, redundancy information, a dummy pattern and/or otherinformation. One or more of the short retention information, mapinformation, test pattern, redundancy information, and/or other types ofinformation may be used to supplement the reliability of the firstmemory units.

It is to be understood that this detailed description is illustrativeonly, and various additions and/or modifications may be made to theseembodiments, especially in matters of structure and arrangements ofparts. Accordingly, the scope of the present disclosure should not belimited by the particular embodiments described above, but should bedefined by the claims set forth below and equivalents thereof.

1. A method of operating a memory device, comprising: writing a firstdata set to first memory units; writing a second data set to secondmemory units, wherein the second memory units are associated with lowerdata reliability than the first memory units and the second data setincludes one or more of information used to interpret the first data setand a dummy pattern.
 2. The method of claim 1, wherein the second dataunits have lower data reliability due to non-random errors arising fromone or both of hardware configuration of the memory device andalgorithmic operation of the memory device.
 3. The method of claim 1,wherein the dummy pattern is a fixed pattern.
 4. The method of claim 1,further comprising using the information contained in the second dataset to increase the reliability of the first data set.
 5. The method ofclaim 1, wherein the second data set comprises one or both of multipleredundant copies of metadata used to aid in reading or decoding thefirst data set and redundancy information configured to protect the datastored in the first memory units.
 6. The method of claim 5, wherein theredundancy information comprises redundancy information associated withmultiple types of error correcting code.
 7. The method of claim 8,further comprising: decoding the data stored in the first memory cellsusing the redundancy information of each of the multiple types of errorcorrecting code to provide multiple sets decoded data; and implementinga voting scheme among the multiple sets of decoded data to identifycorrectly decoded data.
 8. A method of operating a memory device,comprising: identifying first pages having higher data reliability andsecond pages having lower data reliability; writing a first data set tothe first pages; writing a second data set to the second pages, whereinthe second data set includes information that is useable to interpretthe first data set or the second data set includes a dummy pattern. 9.The method of claim 8, the second memory units comprise a predeterminednumber of memory pages of a memory block that are written last during awrite operation of the memory block.
 10. The method of claim 8, whereinthe solid state memory device comprises a multilevel solid state memorydevice and the predetermined number is four.
 11. The method of claim 8,wherein the dummy pattern comprises all erased bits.
 12. The method ofclaim 8, wherein writing the second data set comprises writing a testpattern.
 13. The method of claim 12, further comprising: reading thetest pattern; and using results of reading the test pattern to determineparameters to read the first memory units.
 14. A memory device,comprising: memory storage including first memory units identified ashaving higher data reliability and second memory units identified ashaving lower data reliability; and a memory controller configured towrite a first data set to the first memory units identified as havinghigher data reliability and to write a second data set to the secondmemory units identified as having lower data reliability, wherein thesecond data set includes one or both of information that is useable tointerpret the first data set and a dummy pattern.
 15. The memory deviceof claim 14, wherein the controller is configured to identify the secondmemory units as having lower reliability.
 16. The memory device of claim14, wherein the second memory units have lower data reliability due tonon-random errors arising from one or both of hardware configuration ofthe memory device and algorithmic operation of the memory device. 17.The memory device of claim 14, wherein the dummy pattern comprises oneor both of erased bits or random bits.
 18. The memory device of claim14, wherein the memory storage comprises flash memory.
 19. The memorydevice of claim 18, wherein the second memory units comprise apredetermined number of memory pages of a memory block that are writtenlast during a write operation of the memory block.
 20. The memory deviceof claim 18, wherein the information is useable to increase reliabilityof the first data set.